STP607D p channel enhancement mode mosfet - 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com . STP607D 2010. v1 description STP607D is the p-channel logic enhancement mode pow er field effect transistor which is produced using high cell density, dmos trench te chnology. the STP607D has been designed specially to improve the overall efficienc y of dc/dc converters using either synchronous or conventional switching pwm controlle rs. it has been optimized for low gate charge, low r ds(on) and fast switching speed. pin configuration (d-pak) to-252 to-251 part marking y: year code a: date code q: process code feature -60v/-10.0a, r ds(on) = 150m? typ. @v gs = -10v super high density cell design for extremely low r ds(on) exceptional on-resistance and maximum dc current capability to-252package design
STP607D p channel enhancement mode mosfet - 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com . STP607D 2010. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbo l typical unit drain-source voltage vdss -60 v gate-source voltage vgss 20 v continuous drain current (tj=150 ) ta=25 ta=100 id -10.0 -6.0 a pulsed drain current idm -20 a continuous source current (diode conduction) is -12 a power dissipation ta=25 pd 25 w operation junction temperature tj 150 storgae temperature range tstg -55/150 thermal resistance-junction to ambient rja 20 /w
STP607D p channel enhancement mode mosfet - 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com . STP607D 2010. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max uni t static drain - source breakdown voltage v (br)dss v gs =0v,id=-250ua -60 v gate threshold voltage v gs(th) v ds =v gs ,id=-250ua -1.5 -3.0 v gate leakage current i gss v ds =0v,v gs =20v 100 na zero gate voltage drain current i dss v ds =-48v,v gs =0v -1 ua v ds =-48v,v gs =0v t j =55 -5 on - state drain current i d(on) v ds R -10v,v ds =-5v -10 a drain-source on- resistance r ds(on) v gs =-10v,i d =-10a 150 160 m? forward transconductance gfs v ds =-5v,i d =-10a 13 s diode forward voltage v sd i s =-7.8a,v gs =0v -1.0 v dynamic total gate charge q g v ds =-30v,v gs =-10v i d =-10a 16 nc gate-source charge q gs 8 gate-drain charge q gd 3.0 input capacitance c iss v ds =-30v,v gs =0v f=1mhz 1200 pf output capacitance c oss 115 reverse transfercapacitance c rss 7 turn-on time t d(on) tr v gs =-10v,v ds =-30v r egn =3?,r l =2.5? 9 ns 10 turn-off time t d(off) tf 25 11
STP607D p channel enhancement mode mosfet - 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com . STP607D 2010. v1 typical characterictics
STP607D p channel enhancement mode mosfet - 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com . STP607D 2010. v1 typical characterictics
STP607D p channel enhancement mode mosfet - 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com . STP607D 2010. v1 typical characterictics
STP607D p channel enhancement mode mosfet - 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com . STP607D 2010. v1
STP607D p channel enhancement mode mosfet - 10.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com . STP607D 2010. v1 to-252-2l package outline sop-8p
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